Applying power MOSFETs to design High voltage switch module in radar transmitter

Authors

  • Nguyen Van Hung (Corresponding Author) Viện Ra đa, Viện KH – CN quân sự
  • Nguyen Trung Thanh Viện Ra đa, Viện KH – CN quân sự
  • Nguyen Phi Dieu Viện Ra đa, Viện KH – CN quân sự
  • Kim Duc Hiep Viện Ra đa, Viện KH – CN quân sự
  • Giang Van The Viện Ra đa, Viện KH – CN quân sự

Keywords:

High voltage, Power MOSFET, Transmitter modulation pulse, Military radar

Abstract

This paper presents technical solutions using power MOSFETs to design switching modules for high-voltage modulator for high-power microwave amplifiers in radar transmitters. On the basis of analysis of switching model and characteristic specifications of MOSFETs that directly affect modulation pulse parameters, studies and calculations have been performed to allow serial coupling of power MOSFETs to make a high-voltage power MOSFETs module. The results give experimental diagrams, component selection, simulation and quality assessment.

References

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Published

01-08-2021

How to Cite

[1]
H. Nguyen Van, T. Nguyen Trung, Điều Nguyen Phi, H. Kim Duc, and T. Giang Van, “Applying power MOSFETs to design High voltage switch module in radar transmitter”, J. Mil. Sci. Technol., no. RD, pp. 136–141, Aug. 2021.

Issue

Section

Research Articles