Evaluating the effects of high frequency electromagnetic radiation to electronic devices
Keywords:
High Power electromagnetics - HPEM, The particular field, Interesting subjectAbstract
Electronic circuits whose main components are discrete semiconductor devices or integrated circuits (ICs) tend to grow smaller. As such, the voltage provided for the operation of the circuit is becoming lower. The electromagnetic interferences from the power source typically are significant enough to intentionally or unintentionally penetrate semiconductor electronic devices, causing degradation and sometimes event failures in electronic circuits. This paper studies the power limits of high frequency (HF) signal sources to prevent failures in electronics circuits. Experiments are done in a transmitter power supply, consisting of a waveguide system, an oscillator (magnetron), some other accessories, and an electronic circuit integrated with ICs made by TTL/CMOS technology as test objects. The results during the experiment can help determine the power level limit that can affect the electronic equipment’s operation. We also propose several applications that can apply in practical systems based on these findings.
References
Nicholas A. Estep, “High Power Microwave (HPM) and Ionizing Radiation Effects on CMOS Devices,” Thesesand Dissertations (2009), tr. 6-25.
Michael A. Holloway, “Characterization and Modeling of High Power Microwave Effects in CMOS Microelectronics,” University of Maryland, College Park, Department of Electrical and Computer Engineering (2010), pp. 3-18.
Dr. John Rodgers, “Protection of Electronic Systems from the Effects of High-Power Microwave (HPM) and Ultra-Wideband (UWB) Sources,” University of Maryland, Institute for Research in Electronics and Applied PhysicsEnergy Research Facility (2012), tr. 2-12.
