Effects of space environment on electrical properties of Semiconductor Device on flight vehicle

Authors

  • Tran Tuan Trung (Corresponding Author) Viện Tên lửa – Viện Khoa học và Công nghệ quân sự
  • Dao Dinh Ha Bộ môn Vi xử lý – Học viện kỹ thuật quân sự

Keywords:

Semiconductor, Mosfet, Ionizing radiation, Dielectric SiO2

Abstract

This paper presents some effects of space ionizing radiation on electrical parameters of CMOS semiconductors. These impacts are calculated and simulated by numerical calculation method. The calculation results allow estimating the guaranted safe working time of electronic-semiconductor devices in the space environment.

References

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Published

01-10-2021

How to Cite

[1]
T. Tran Tuan and H. Dao Dinh, “Effects of space environment on electrical properties of Semiconductor Device on flight vehicle”, J. Mil. Sci. Technol., no. FMC, pp. 32–39, Oct. 2021.

Issue

Section

Avionics and Flight Control